TSAL4400 www.vishay.com vishay semiconductors rev. 1.9, 03-nov-16 1 document number: 81006 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 high power infrared emitting diode, 940 nm, gaalas, mqw description TSAL4400 is an infrared, 940 nm emitting diode in gaalas, mqw technology with high radiant power molded in a blue-gray plastic package. features ? package type: leaded ? package form: t-1 ? dimensions (in mm): ? 3 ? peak wavelength: p = 940 nm ? high reliability ? high radiant power ? high radiant intensity ? angle of half intensity: ? = 25 ? low forward voltage ? suitable for high pulse current operation ? good spectral matching with si photodetectors ? package matches with detector teft4300 ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 applications ? infrared remote control units ? free air transmission systems ? infrared source for optical counters and card readers note ? test conditions see table basic characteristics note ? moq: minimum order quantity 94 8636 product summary component i e (mw/sr) ? (deg) p (nm) t r (ns) TSAL4400 36 25 940 15 ordering information ordering code packaging remarks package form TSAL4400 bulk moq: 5000 pcs, 5000 pcs/bulk t-1 TSAL4400-rsz ammopack moq: 8000 pcs, 2000 pcs/box t-1 absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit reverse voltage v r 5v forward current i f 100 ma peak forward current t p /t = 0.5, t p = 100 s i fm 200 ma surge forward current t p = 100 s i fsm 1.5 a power di ssipation p v 160 mw junction temperature t j 100 c operating temperature range t amb -40 to +85 c storage temperature range t stg -40 to +100 c soldering temperature t 5 s, 2 mm from case t sd 260 c thermal resistance junction / ambient j-std-051, leads 7 mm, soldered on pcb r thja 300 k/w
TSAL4400 www.vishay.com vishay semiconductors rev. 1.9, 03-nov-16 2 document number: 81006 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - power dissipation limit vs. ambient temperatur e fig. 2 - forward current limit vs. ambient temperature basic characteristics (t amb = 25 c, unless otherwise specified) fig. 3 - pulse forward current vs. pulse duration fig. 4 - forward current vs. forward voltage 0 20 40 60 80 100 120 140 160 180 0 102030405060708090100 21317 t amb - ambient temperature (c) p v - power dissipation (mw) r thja = 300 k/w 0 20 40 60 80 100 120 0 10 203040 50607080 90100 t amb - ambient temperature (c) 21318 i f - forward current (ma) r thja = 300 k/w basic characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit forward voltage i f = 100 ma, t p = 20 ms v f - 1.35 1.6 v i f = 1 a, t p = 100 s v f -2.63 v temperature coefficient of v f i f = 1 ma tk vf --1.8-mv/k reverse current v r = 5 v i r - - 10 a junction capacitance v r = 0 v, f = 1 mhz, e = 0 c j -60-pf radiant intensity i f = 100 ma, t p = 20 ms i e 16 36 80 mw/sr i f = 1 a, t p = 100 s i e 135 290 - mw/sr radiant power i f = 100 ma, t p = 20 ms e -40-mw temperature coefficient of e i f = 20 ma tk e - -0.6 - %/k angle of half intensity ? - 25- deg peak wavelength i f = 100 ma p - 940 - nm spectral bandwidth i f = 100 ma ? -25-nm temperature coefficient of p i f = 100 ma tk p -0.25-nm/k rise time i f = 100 ma t r -15-ns fall time i f = 100 ma t f -15-ns t p - pulse duration (ms) 96 11987 10 0 10 1 10 1 10 -1 10 -1 10 0 10 2 10 -2 i - forward current (a) f t p /t = 0.01 i fsm = 1 a (single pulse) 0.05 0.1 0.5 1.0 1 10 100 10 000 01234 i f - forward current (ma) v f - forward voltage (v) 1000 t p = 100 s t p /t = 0.001 13600
TSAL4400 www.vishay.com vishay semiconductors rev. 1.9, 03-nov-16 3 document number: 81006 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - radiant intensity vs. forward current fig. 6 - radiant power vs. forward current fig. 7 - rel. radiant intensit y/power vs. ambient temperature fig. 8 - relative radi ant power vs. wavelength fig. 9 - relative radiant intensity vs. angular displacement 0.1 1 10 100 1000 1101001000 i e - radiant inten s ity (mw/ s r) i f - forward current (ma) t p = 100 s - radiant power (mw) e i f - forward current (ma) 13602 10 3 10 1 10 2 10 4 10 0 0.1 1 10 1000 100 -10 10 50 0 100 0 0.4 0.8 1.2 1.6 i e rel ; 140 94 7993 i f = 20 ma e rel t amb - ambient temperature (c) 0 10 20 30 40 50 60 70 80 90 100 840 880 920 960 1000 1040 - wavelength (nm) 21445 e rel - relative radiant power (%) i f = 30 ma 0.4 0.2 0 14328 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 i - relative radiant intensity e rel ? - angular displacement
TSAL4400 www.vishay.com vishay semiconductors rev. 1.9, 03-nov-16 4 document number: 81006 for technical questions, contact: emittertechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package dimensions in millimeters technical drawing s according to din s pecification s drawing-no.: 6.544-5255.01-4 i ss ue: 9; 28.07.14 ? 3.2 0.15 ac ? 2.9 0.15 0.4 + 0.15 - 0.05 area not plane r1.4 ( s phere) < 0.6 3.4 0.15 4.4 0.3 5.8 0.3 34.4 0.5 1.5 0.5 2.54 nom. (2.5) 0.5 + 0.2 - 0.1
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